Dual Frequency Capacitively Coupled Plasma(DFCCP) has been used in the semiconductor manufacturing for many years. But the physics of the DFCCP is not fully understood. The purpose of this thesis is to understand the physics of the DFCCP. There are four chapter of this thesis. The first chapter deals with the characteristics of the Capacitively Coupled Plasma(CCP) and Inductively Coupled Plasma(ICP). Generally, operation regime of the CCP and ICP is different. Efficient operation pressure of CCP is 20 - 200 mTorr and ICP is 1 - 20 mTorr. Which means that CCP is efficient in the high pressure regime and ICP is efficient in the low pressure regime. To see the power dissipation characteristics of the ICP and CCP, CCP and ICP hybrid plasma source is developed. One power source is used to de-liver power CCP electrode and Induction coil simultaneously. As operation pressure increased, dissipation power ratio through CCP electrode is increase and dissipation power ratio through ICP is decreased. At 10 mTorr, 90% of delivered power is dissipated through induction coil and 50% of delivered power is dissipated through induction coil at pressure 100 mTorr. Ohmic(collisional) heating of electron is dominant in the CCP and stochastic(collisionless) electron heating is dominant in the ICP. So CCP is dominant power dissipation channel in the high pressure regime and ICP is dominant power dissipation channel in the low pressure regime. In the second chapter, we examine the power dissipation characteristics of the dual frequency capacitively coupled plasma. If high frequency power is fixed and low frequency power is increased, then low frequency power dissipation characteristics is changed. There are two power dissipation mechanism in the CCP. One is power dissipation in the bulk plasma which generate plasma. The other is power dissipation in the sheath which accelerate ions to the electrode. It is well known that ion power dissipation is dominant in the low frequency operation and electron power dissipation is dominant in the high frequency operation. Low frequency power dissipation characteristics is changed by high frequency power. Low frequency power dissipation is ion power dissipation dominant for low high frequency power and electron power dissipation dominant for high high frequency power. This means that the power ratio of high and low frequency is governing power dissipation factor. We also examine this power dissipation characteristics by measuring electron density trends. We measured Electron Energy Distribution Function(EEDF) in the DFCCP. High frequency power is fixed and we increase low frequency power. IF we fix high frequency power 300 watt and increase low frequency power, plasma density increased for low low frequency power and at some low frequency power plasma density decreased. This is the same trends as power dissipation characteristics above. Low frequency power is electron power dissipation dominant for low power and ion power dissipation dominant for high power. So electron density increase for low low frequency power and decrease for high low frequency power. We also see the same trends by measuring sheath thickness of the system. Total sheath thickness of the system could be measured by measuring plasma impedance. At high high frequency power(500 watt), sheath thickness ratio is below 10%. At low high frequency power(150 Watt), sheath thickness ratio is over 80%. Sheath thickness also showed same trends as power dissipation characteristics and EEDF measurement. As low frequency power increase sheath thickness increase and reached 10 % for high high frequency power. For low high frequency power, sheath thickness increase as we increase low frequency power, but it reached maximum and decrease as we increase low frequency power. This sheath thickness trends also showed same trends as other experiments. Three experiments for the DFCCP showed same results. We can see the role of high and low frequency power in the dual frequency capacitively coupled plasma.
