InP/InGaAs PIN photodiodes were fabricated for the 10Gbps photoreceiver modules. Two types of PIN photodiodes were fabricated using HBT base-collector junctions. One is a surface-illuminated photodiode(S-PD) that has easy fabrication steps and high integration compatibility with transistors. The other is an edge-illuminated refracting facet photodiode(RFPD) that has a high optical responsivity and an advanced alignment technology. The fabricated S-PD shows a dc responsivity of 0.35A/W and FWHM of 29ps at a wavelength of 1.55㎛. But the S-PD has a low optical responsivity because of thin absorption layer thickness. The alignment with an optical fiber is very difficult because of its small device size(<900μ㎡. To improve the optical responsivity and alignment efficiency, the RFPD utilizing an InP V-groove was fabricated. The fabricated RFPD shows a 37% improved dc responsivity of 0.48A/W compared to the S-PD for the same epi-structures. An FWHM(full-width-at-half-maximum) of the RFPD(900μ㎡) was 24ps and a dark current was smaller than 25nA at an operating voltage of -5V. The alignment of an optical fiber to the photodiode was very easily performed using the on-chip InP V-groove.
