GaAs epitaxial layer was grown on porous Si substrate using AP-MOCVD system. Porous Si keeps the monocrystalline structure of initial silicon and is much more pliant and elastic than Si. So porous Si can be used as substrate for GaAs heteroepitaxy. PS layers were formed by anodizing Boron doped p-type (100) Si substrate with 8~10Ωcm in HF electrolyte. Two step growth is employed for growth of GaAs epilayer on PS. First, Low temperature GaAs layer is deposited at low growth rate. Second, Conventional temperature GaAs layer is deposited at relatively high growth rate. Characterization of GaAs epilayer was performed using X-ray , 300K PL and AFM measurement. The results show that GaAs epilayer on PS is monocrystalline structure. As compared with bare silicon substrate, PS substrate shows better morphology and FWHM than si substrate. As a result, PS substrate is superior to Si sub. for GaAs Heteroepitaxy.
