In this thesis, we fabricated polycrystalline silicon solar cell. Polycrystalline silicon is widely used material in the world. We tried to achieve high efficiency polycrystalline silicon solar cell. Firstly, emitter layer was optimized. Emitter layer optimization is necessary because it directly influences the solar cell performance. Secondly, back surface field layer (BSF) was optimized. The BSF improves open circuit voltage $(V_{oc})$, and it also improves short circuit current $(J_{sc})$. Thirdly, we used double layer antireflection coating (DLAR) to increase the cell performance. Actually, DLAR improves the $J_{sc}$, because it decrease the amount of reflected lights. Fourthly, hydrogen passivation process was performed. Hydrogen passivation is widely used technique to passivate the defects in the material. We used two apparatus to passivate the defects. One is ICP (Inductively Coupled Plasma) which uses hydrogen plasma, and the other is photo-CVD (Chemical Vapor Deposition) which uses UV (Ultra Violet) lamp to decompose the hydrogen gas. Photo-CVD process is preferred because it doesn’t give any damage to the wafer. Finally, we fabricated hydrogenated polycrystalline silicon solar cell with DLAR and BSF. Its performance was improved compared with the initial polycrystalline silicon solar cell.
