서지주요정보
극박 동박 제조 공정중 Cr 도금 표면이 Cu/Cr층의 Cu 전착 거동에 미치는 영향 = A study on the effects of the Cr electrodeposition layer on the Cu electrodeposit behavior of the Cu/Cr layer for UTC process
서명 / 저자 극박 동박 제조 공정중 Cr 도금 표면이 Cu/Cr층의 Cu 전착 거동에 미치는 영향 = A study on the effects of the Cr electrodeposition layer on the Cu electrodeposit behavior of the Cu/Cr layer for UTC process / 김기태.
저자명 김기태 ; Kim, Ki-Tae
발행사항 [대전 : 한국과학기술원, 2000].
Online Access 비공개원문

소장정보

등록번호

8011058

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 00008

SMS전송

도서상태

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반납예정일

초록정보

 Electroplated copper foil is used of printed circuit board as conducting wire. As electrics industry is developing, the circuit width becomes narrow and circuit density is on the increase. To make the high density electric circuit, ultra thin copper foil which the thickness is 3 ∼ 9 ㎛ is required. Carrier is used for UTC manufacture to support UTC because UTC is unable to support itself. Release layer is made to easily release between UTC and carrier. Release layer has an influence on copper nucleation and growth. In this study, the effects of the electroplated Cr layer on the Cu electrodeposit behavior were investigated by electrochemical method.  The electrochemical behavior of Cr reduction in the 1 M $CrO_3$ + 0.01 M $H_2SO_4$ solution was examined by potentiodynamic polarization test. Metal Cr was electroplated below -1.2 $V_{SCE}$. The surface morphologies of the electroplated Cr layer at -0.15 ∼ -0.8 A/㎠ for 2 ∼ 16 seconds were smooth. As current density of Cr electroplating increased, granular particles grew on the even Cr layer. As the Cr plating time increased, the deposit potential of Cu on Cr layer, which was plated at -0.15 A/㎠, became low. Moreover real overvoltage for Cu plating increased, the Cu nuclei density decreased, and the size of Cu nuclei increased. At the initiation of Cu nucleation, current density was linearly proportional to the $(t-t_0)^{\frac{3}{2}}$. It means that Cu did three-dimensional progressive nucleation.  It is a well known fact that cathode film was formed on the Cr plating layer in Cr plating. To clear the cathode film, -3.0 $V_{SCE}$ was applied to the Cr plating layer for 30 second in pH 14 buffer solution. The Cu nuclei density electrodeposited on cathodized Cr layer was higher than that electrodeposited on non-treated Cr layer. When +0.15 $V_{SCE}$ was applied to the Cr plating layer for 30 second in pH 14 buffer solution, the Cu nuclei density was drastically increased on anodized Cr layer. The cathodic treatment dissolved the cathode film formed while Cr plating. So the voltage did not drop at the cathode film. Non-voltage drop at cathode film induced real overvoltage high. Nuclei generation rate is related to the overvoltage through the equation N.R = $K_1exp(-\frac{K_2}{\eta^2}$). Accordingly, the Cu nuclei density decreased on cathodized Cr layer. At the anodic treatment, not only the cathode film, but also the Cr plating layer was dissolved. So the voltage drop at the anodized Cr plating layer was higher than that at the cathodized Cr plating layer. Therefore, Cu nuclei density on anodized Cr layer is exceedingly high.

서지기타정보

서지기타정보
청구기호 {MMS 00008
형태사항 ix, 84 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Ki-Tae Kim
지도교수의 한글표기 : 권혁상
지도교수의 영문표기 : Hyuk-Sang Kwon
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 81-84
주제 크롬 도금
구리 도금
음극 처리
양극 처리
극박 동박
Cr electrodeposition
Cu electrodeposition
Cathodizing
Anodizing
UTC
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