In this thesis, HgCdTe infrared detector diodes have been fabricated by employing the hydrogenation technique. Hydrogenation, putting HgCdTe wafer in the hydrogen plasma, was not reproducible before. It is known that hydrogenation can passivate the Hg-vacancy in the vacancy-doped HgCdTe p-type wafer. So hydrogenation can be used to make the p-n junction of the HgCdTe infrared detector diodes.
First, varying the hydrogenation process variables, reproducibility of the hydrogenation is tested. Plasma power, process time, and wafer position in the plasma was the variable. The differential Hall measurement was used to characterize the hydrogenated junction. It was shown that the junction depth by hydrogenation was almost constant under the optimized condition.
Next, hydrogenated HgCdTe diode was fabricated and tested. The properties of the hydrogenated diodes were much better than older-implanted diodes. The hydrogenated diode have the maximum RoA value of 109, much greater the BLIP condition. It also was shown that the uniformity of the hydrogenated diodes was good. And finally, photo-response of the diode was shown using dewar and germanium window that can pass the 8um to 12um infrared lights.
