The absorption coefficient of InGaAsP / InGaAsP Quantum Well material was calculated for the electro-absorption modulator application. The results of this calculation can be used as a guide to designing of wafer structure for electro-absorption modulator. And then the mathematical model for electro-absorption modulator considering the optical and the electrical characteristics was constructed. It also considered the effect of light intensity saturation on the electrical and the optical characteristics of modulator. Finally, vacancy induced disordering process was studied. It was observed that quantum well structure was more disordered as annealing temperature and time were increased. Quantum Confined Stark Effect in disordered structure was also observed. It was shown that disordered wafer can be used for electro-absorption modulator application.
