Copper thin films were deposited onto TiN by low pressure metal-organic chemical vapor deposition, using hfacCu(I)TMVS (hexafluoroacetylacetonateㆍ$Cu^{+1}$ㆍ trimethylvinylsilane) and argon carrier gas. The deposition rate was measured as a function of deposition variables, such as the deposition temperature, the partial pressure of hfacCu(I)TMVS and the total flow rate. The deposition rate increased with the deposition temperature and the partial pressure of hfacCu(I)TMVS, but was nearly independent on the total flow rate. Below 230℃, the deposition kinetic was limited by the surface reaction and the apparent activation energy was 12.28 Kcal/mole. Copper thin films were deposited as the polycrystalline form with the face centered cubic structure, irrespective of deposition conditions. X-ray diffraction patterns showed that copper thin films had strongly preferred (111) orientation at the relatively low deposition temperature(188℃) but gradually turned towards random orientation according as the deposition temperature increased. The grain size of copper film whose thickness was 6000Å ranged from 1000Å to 3000Å. As the deposition temperature increased, the grain size increased a bit and became uniform but the disconnected parts between grains increased. There were no impurities except carbon and oxygen in copper thin films and their contents decreased to 1 a/o according as the deposition temperature decreased to 145℃. Copper thin films had the smooth surface at low deposition temperature and the rough surface at high deposition temperature. The step coverage of copper thin films was so good that the contact hole, sized with 0.55㎛×0.55㎛×1.3㎛, was filled without void. However, this property deteriorated at high deposition temperature.
The electrical resistivity of copper thin films decreased as the deposition temperature decreased, which could be explained by the reduced amount of impurities and disconnected parts within copper thin films. Copper deposits changed into the continuous film through growth of islands and their coalescence, irrespective of deposition temperature. As the deposition temperature increased, the aspect ratio(=height/width) of copper islands increased and the cross sectional morphology of copper islands became irregular. The probability for the disconnected part within copper thin films could be inferred from the cross sectional morphology of copper islands at various deposition temperatures.
