Film Bulk Acoustic Resonators(FBARs) are monolithically integral with semiconductor devices,leading to small size and low cost, high Q rf circuit elements with wide applications in the EW, radar and communications area.
We investigated the characteristics of ZnO films deposited on Al/$SiO_2$/Si using RF planar magnetron sputtering.
FBARs were fabricated, consisting of ZnO films supported by diaphragm which is an important part of the thin film resonator technology.
The characteristics of FBARs were studied by using the one-dimensional Mason model which includes multiple layers of piezoelctric and nonpiezoelectric layers of arbitrary thickness, the loading effects of metallic electrodes, the possibility of standing acoustic waves from the substrate, the effects of the attenuations of layers, and the effects of the shear mode.
